Influence of Dry Recess Process on Enhancement-Mode GaN...

Japanese Journal of Applied Physics 2013 / 01 Vol. 52; Iss. 1S

Influence of Dry Recess Process on Enhancement-Mode GaN Metal–Oxide–Semiconductor Field-Effect Transistors

Wang, Qingpeng, Tamai, Kentaro, Miyashita, Takahiro, Motoyama, Shin-ichi, Wang, Dejun, Ao, Jin-Ping, Ohno, Yasuo
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Volume:
52
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.52.01AG02
Date:
January, 2013
File:
PDF, 851 KB
english, 2013
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