Electrical characterisation of the p-type dopant diffusion of highly doped AlGaAs/GaAs heterojunction bipolar transistors grown by MOCVD
Dangla, J., Dubon-Chevallier, C., Filoche, M., Azoulay, R.Volume:
26
Year:
1990
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el:19900687
File:
PDF, 546 KB
english, 1990