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The effect of (NH 4 ) 2 S x passivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices
Carrad, D J, Burke, A M, Reece, P J, Lyttleton, R W, Waddington, D E J, Rai, A, Reuter, D, Wieck, A D, Micolich, A PVolume:
25
Language:
english
Journal:
Journal of Physics: Condensed Matter
DOI:
10.1088/0953-8984/25/32/325304
Date:
August, 2013
File:
PDF, 1001 KB
english, 2013