[IEEE 2015 Symposium on VLSI Technology - Kyoto, Japan...

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[IEEE 2015 Symposium on VLSI Technology...

[IEEE 2015 Symposium on VLSI Technology - Kyoto, Japan (2015.6.16-2015.6.18)] 2015 Symposium on VLSI Technology (VLSI Technology) - Low power 1T DRAM/NVM versatile memory featuring steep sub-60-mV/decade operation, fast 20-ns speed, and robust 85°C-extrapolated 1016 endurance

Chiu, Yu-Chien, Cheng, Chun-Hu, Chang, Chun-Yen, Lee, Min-Hung, Hsu, Hsiao-Hsuan, Yen, Shiang-Shiou

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Year:

2015

Language:

english

DOI:

10.1109/VLSIT.2015.7223671

File:

PDF, 575 KB

english, 2015

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[IEEE 2015 Symposium on VLSI Technology - Kyoto, Japan...

[IEEE 2015 Symposium on VLSI Technology - Kyoto, Japan (2015.6.16-2015.6.18)] 2015 Symposium on VLSI Technology (VLSI Technology) - Low power 1T DRAM/NVM versatile memory featuring steep sub-60-mV/decade operation, fast 20-ns speed, and robust 85&#x00B0;C-extrapolated 1016 endurance

[IEEE 2015 Symposium on VLSI Technology - Kyoto, Japan (2015.6.16-2015.6.18)] 2015 Symposium on VLSI Technology (VLSI Technology) - Low power 1T DRAM/NVM versatile memory featuring steep sub-60-mV/decade operation, fast 20-ns speed, and robust 85°C-extrapolated 1016 endurance