SPIE Proceedings [SPIE Integrated Optoelectronic Devices 2007 - San Jose, CA (Saturday 20 January 2007)] Gallium Nitride Materials and Devices II - Epitaxial growth and characterization of AlGaN/GaN HEMT devices on SiC substrates for RF applications
Sood, Ashok K., Puri, Yash R., Clarke, Frederick W., Deng, Jie, Hwang, James C. M., Brierley, Steven K., Khan, M. Asif, Dabiran, Amir, Chow, Peter, Laboutin, Oleg A., Welser, Roger E., Morkoc, Hadis,Volume:
6473
Year:
2007
Language:
english
DOI:
10.1117/12.704201
File:
PDF, 1.03 MB
english, 2007