GaAs Growth Using an MBE System Connected with a 100 kV UHV...

Japanese Journal of Applied Physics 1984 / 8 Vol. 23; Iss. Part 2, No

GaAs Growth Using an MBE System Connected with a 100 kV UHV Maskless Ion Implanter

Takamori, Akira, Miyauchi, Eizo, Arimoto, Hiroshi, Bamba, Yasuo, Hashimoto, Hisao
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Volume:
23
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.23.L599
Date:
August, 1984
File:
PDF, 207 KB
english, 1984
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