![](/img/cover-not-exists.png)
GaAs Growth Using an MBE System Connected with a 100 kV UHV Maskless Ion Implanter
Takamori, Akira, Miyauchi, Eizo, Arimoto, Hiroshi, Bamba, Yasuo, Hashimoto, HisaoVolume:
23
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.23.L599
Date:
August, 1984
File:
PDF, 207 KB
english, 1984