Rapid Thermal Annealing of Si + Implanted GaAs in the Presence of Arsenic Pressure by GaAs Powder
Hiramoto, Toshiro, Saito, Toshio, Ikoma, ToshiakiVolume:
24
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.24.L193
Date:
March, 1985
File:
PDF, 640 KB
english, 1985