Fine Pattern Formation of Gallium Arsenide by...

Japanese Journal of Applied Physics 1990 / 1 Vol. 29; Iss. Part 2, No

Fine Pattern Formation of Gallium Arsenide by In Situ Electron-Beam Lithography Using an Ultrathin Surface Oxide as a Resist

Taneya, Mototaka, Sugimoto, Yoshimasa, Hidaka, Hiroshi, Akita, Kenzo
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Volume:
29
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.29.L182
Date:
January, 1990
File:
PDF, 1.51 MB
english, 1990
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