Hydrogen Annealing of Transparent Gate MOS Diodes

Japanese Journal of Applied Physics 1990 / 11 Vol. 29; Iss. Part 2, No

Hydrogen Annealing of Transparent Gate MOS Diodes

Takato, Hidetaka, Ishii, Kenichi, Hayashi, Yutaka
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Volume:
29
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.29.L1984
Date:
November, 1990
File:
PDF, 852 KB
english, 1990
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