Thermal Relaxation Phenomena in the Formation of...

Japanese Journal of Applied Physics 1993 / 12 Vol. 32; Iss. Part 1, No

Thermal Relaxation Phenomena in the Formation of Device-Quality SiO 2 /Si Interfaces

Lucovsky, G., Bjorkman, C. H., Yasuda, T., Emmerichs, U., Meyer, C., Leo, K., Kurz, H.
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Volume:
32
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.32.6196
Date:
December, 1993
File:
PDF, 177 KB
english, 1993
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