Improvement of Reliability of Metal-Oxide Semiconductor...

Japanese Journal of Applied Physics 1998 / 10 Vol. 37; Iss. Part 1, No

Improvement of Reliability of Metal-Oxide Semiconductor Field-Effect Transistors with N 2 O Nitrided Gate Oxide and N 2 O Polysilicon Gate Reoxidation

Lai, Chao Sung, Chao, Tien Sheng, Lei, Tan Fu, Lee, Chung Len, Huang, Tiao Yuan, Chang, Chun Yen
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Volume:
37
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.37.5507
Date:
October, 1998
File:
PDF, 129 KB
english, 1998
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