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Calculation of Electrical Properties of Novel Double-Barrier Metal Oxide Semiconductor Transistors
Hatano, Tsuyoshi, Nomura, Akihiro, Yoshida, Masayoshi, Nakajima, Anri, Shibahara, Kentaro, Yokoyama, ShinVolume:
38
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.38.399
Date:
January, 1999
File:
PDF, 107 KB
english, 1999