Growth of 3C-SiC on Si Substrate with Ge...

Japanese Journal of Applied Physics 2001 / 10 Vol. 40; Iss. Part 1, No

Growth of 3C-SiC on Si Substrate with Ge 1-0.63 C 0.63 Buffer Layer

Sun, Yong, Miyasato, Tatsuro
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
40
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.40.5885
Date:
October, 2001
File:
PDF, 408 KB
english, 2001
Conversion to is in progress
Conversion to is failed