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Characteristics of Multiple Thickness Gate Oxides Using Oxidation Enhancement by Si Implantation
Cho, Heung-Jae, Lim, Kwan-Yong, Lee, Jeong-Youb, Park, Dae-Gyu, Yeo, In-Seok, Lee, Jung-Ho, Roh, Jae-SungVolume:
42
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.42.1919
Date:
April, 2003
File:
PDF, 855 KB
2003