Defect Formation in (0001)- and (11\bar20)-Oriented 4H-SiC...

Japanese Journal of Applied Physics 2004 / 10 Vol. 43; Iss. 10

Defect Formation in (0001)- and (11\bar20)-Oriented 4H-SiC Crystals P + -Implanted at Room Temperature

Okada, Tatsuya, Negoro, Yuki, Kimoto, Tsunenobu, Okamoto, Kouichi, Kujime, Noriyuki, Tanaka, Naoki, Matsunami, Hiroyuki
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Volume:
43
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.43.6884
Date:
October, 2004
File:
PDF, 270 KB
english, 2004
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