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Evaluation of Electrical Characteristics and Trap-State Density in Bottom-Gate Polycrystalline Thin Film Transistors Processed with High-Pressure Water Vapor Annealing
Kunii, MasafumiVolume:
45
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.45.660
Date:
February, 2006
File:
PDF, 529 KB
english, 2006