Ambipolar Carrier Injection Characteristics of...

Japanese Journal of Applied Physics 2006 / 2 Vol. 45; Iss. 2A

Ambipolar Carrier Injection Characteristics of Erbium-Silicided n -Type Schottky Barrier Metal–Oxide–Semiconductor Field-Effect Transistors

Jang, Moongyu, Kim, Yarkyeon, Jeon, Myungsim, Choi, Cheljong, Park, Byoungchul, Lee, Seongjae
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Volume:
45
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.45.730
Date:
February, 2006
File:
PDF, 555 KB
english, 2006
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