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Complementary Metal–Oxide–Silicon Field-Effect-Transistors Featuring Atomically Flat Gate Insulator Film/Silicon Interface
Kuroda, Rihito, Teramoto, Akinobu, Nakao, Yukihisa, Suwa, Tomoyuki, Konda, Masahiro, Hasebe, Rui, Li, Xiang, Isogai, Tatsunori, Tanaka, Hiroaki, Sugawa, Shigetoshi, Ohmi, TadahiroVolume:
48
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.48.04C048
Date:
April, 2009
File:
PDF, 267 KB
english, 2009