Investigation of trapping levels in standard, nitrogenated...

Investigation of trapping levels in standard, nitrogenated and oxygenated Si p–n junctions by thermally stimulated currents

I. Pintilie, D. Petre, L. Pintilie, C. Tivarus, M. Petris, T. Botila
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Volume:
439
Year:
2000
Language:
english
Pages:
7
DOI:
10.1016/s0168-9002(99)00845-1
File:
PDF, 190 KB
english, 2000
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