Reduction of Dislocations in GaN Epilayer Grown on Si (111)...

Chinese Physics Letters 2006 / 09 Vol. 23; Iss. 9

Reduction of Dislocations in GaN Epilayer Grown on Si (111) Substrates using a GaN Intermedial Layer

Jian-Feng, Wang, Bao-Shun, Zhang, Ji-Cai, Zhang, Jian-Jun, Zhu, Yu-Tian, Wang, Jun, Chen, Wei, Liu, De-Sheng, Jiang, Duan-Zheng, Yao, Hui, Yang
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Volume:
23
Language:
english
Journal:
Chinese Physics Letters
DOI:
10.1088/0256-307X/23/9/067
Date:
September, 2006
File:
PDF, 305 KB
english, 2006
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