Impact of Using the Octagonal Layout for SOI MOSFETs in...

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Impact of Using the Octagonal Layout for SOI MOSFETs in High Temperature Environment

S. Gimenez, E. Galembeck, C. Renaux, D. Flandre
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Year:
2015
Language:
english
DOI:
10.1109/TDMR.2015.2474739
File:
PDF, 1.72 MB
english, 2015
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