Precise Profiles for Arsenic Implanted in Si and SiO 2 over a Wide Implantation Energy Range (10 keV–2.56 MeV)
Nakata, Jyoji, Kajiyama, KenjiVolume:
21
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.21.1363
Date:
September, 1982
File:
PDF, 1.07 MB
1982