Precise Profiles for Arsenic Implanted in Si and SiO...

Precise Profiles for Arsenic Implanted in Si and SiO 2 over a Wide Implantation Energy Range (10 keV–2.56 MeV)

Nakata, Jyoji, Kajiyama, Kenji
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Volume:
21
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.21.1363
Date:
September, 1982
File:
PDF, 1.07 MB
1982
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