Effects of Growth Conditions on Electron Trap...

Japanese Journal of Applied Physics 1984 / 2 Vol. 23; Iss. Part 2, No

Effects of Growth Conditions on Electron Trap Concentrations in Si-Doped Al 0.2 Ga 0.8 As Grown by MBE

Naritsuka, Shigeya, Yamanaka, Kenichi, Mihara, Minoru, Ishii, Makoto
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Volume:
23
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.23.L112
Date:
February, 1984
File:
PDF, 333 KB
1984
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