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Determination of Impurity Distribution in p-Type Si Epitaxial Layers by C - V Analysis of Sm on p-Type Si Schottky Diodes
Miki, Katsuhiko, Yoshida, NaosatoVolume:
23
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.23.L336
Date:
May, 1984
File:
PDF, 1.36 MB
english, 1984