Heavily Boron-Doped Silicon Single Crystal Growth: Boron...

Japanese Journal of Applied Physics 1999 / 3 Vol. 38; Iss. Part 2, No

Heavily Boron-Doped Silicon Single Crystal Growth: Boron Segregation

Taishi, Toshinori, Huang, Xinming, Kubota, Masayoshi, Kajigaya, Tomio, Fukami, Tatsuo, Hoshikawa, Keigo
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Volume:
38
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.38.L223
Date:
March, 1999
File:
PDF, 45 KB
english, 1999
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