New Observations on Hot-Carrier Degradation in 0.1 µm...

Japanese Journal of Applied Physics 2002 / 5 Vol. 41; Iss. Part 2, No

New Observations on Hot-Carrier Degradation in 0.1 µm Silicon-on-Insulator n-Type Metal Oxide Semiconductor Field Effect Transistors

Yeh, Wen-Kuan, Wang, Wen-Han, Fang, Yean-Kuen, Yang, Fu-Liang
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Volume:
41
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.41.L502
Date:
May, 2002
File:
PDF, 226 KB
english, 2002
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