Study of Gate Length Dependence of Two-dimensional Carrier...

Japanese Journal of Applied Physics 2005 / 4 Vol. 44; Iss. 4B

Study of Gate Length Dependence of Two-dimensional Carrier Profile in N-FET by Scanning Tunneling Microscopy

Fukutome, Hidenobu, Aoyama, Takayuki, Arimoto, Hiroshi
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Volume:
44
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.44.2395
Date:
April, 2005
File:
PDF, 141 KB
english, 2005
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