A Three-Dimensional Simulation Study of Source/Drain-Tied...

Japanese Journal of Applied Physics 2011 / 8 Vol. 50; Iss. 8

A Three-Dimensional Simulation Study of Source/Drain-Tied Double-Gate Fin Field-Effect Transistor Design for 16-nm Half-Pitch Technology Generation and Beyond

Eng, Yi-Chuen, Lin, Jyi-Tsong, Chang, Tzu-Feng, Chen, Chun-Yu, Fan, Yi-Hsuan, Chen, Cheng-Hsin, Lin, Po-Hsieh
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Volume:
50
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.50.084301
Date:
August, 2011
File:
PDF, 300 KB
english, 2011
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