0.15 [micro sign]m double modulation doped...

Electronics Letters 1997 Vol. 33; Iss. 6

0.15 [micro sign]m double modulation doped InAs-inserted-channel MODFETs: Gate recess for optimum RF performances

Xu, D., Heiß, H., Kraus, S., Sexl, M., Böhm, G., Tränkle, G., Weimann, G., Abstreiter, G.
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Volume:
33
Year:
1997
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el:19970296
File:
PDF, 80 KB
english, 1997
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