AFM study of a SiC film grown on Si(100) surface using a...

Applied Surface Science 2001 / 1 Vol. 169-170

AFM study of a SiC film grown on Si(100) surface using a C2H4 beam

Takami, T., Igari, Y., Abe, I., Ishidzuka, S., Kusunoki, I.
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Volume:
169-170
Language:
english
Pages:
5
Journal:
Applied Surface Science
DOI:
10.1016/s0169-4332(00)00678-4
Date:
January, 2001
File:
PDF, 340 KB
english, 2001
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