Growth mechanism of sputter deposited Ta and Ta–N thin...

Applied Surface Science 2001 / 1 Vol. 169-170

Growth mechanism of sputter deposited Ta and Ta–N thin films induced by an underlying titanium layer and varying nitrogen flow rates

Chen, G.S., Chen, S.T., Huang, S.C., Lee, H.Y.
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Volume:
169-170
Language:
english
Pages:
5
Journal:
Applied Surface Science
DOI:
10.1016/s0169-4332(00)00679-6
Date:
January, 2001
File:
PDF, 256 KB
english, 2001
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