Analysis of charge density and Fermi level of AlInSb/InSb single-gate high electron mobility transistor
S. T. Chandra, N. B. Balamurugan, M. Bhuvaneswari, N. Anbuselvan, N. MohankumarYear:
2015
Language:
english
DOI:
10.1088/1674-4926/36/6/064003
File:
PDF, 374 KB
english, 2015