On the growth mechanism of UV laser deposited a-C:H from...

Applied Surface Science 2001 Vol. 172; Iss. 3-4

On the growth mechanism of UV laser deposited a-C:H from CH2I2 at room temperature

Mikael Lindstam, Mats Boman, Klaus Piglmayer
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Volume:
172
Year:
2001
Language:
english
Pages:
7
DOI:
10.1016/s0169-4332(00)00853-9
File:
PDF, 588 KB
english, 2001
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