Investigation of oxide growth and stability on n-GaAs and n-InP by coupling transient photocurrent and surface analysis
I Gérard, N Simon, A EtcheberryVolume:
175-176
Year:
2001
Language:
english
Pages:
6
DOI:
10.1016/s0169-4332(01)00083-6
File:
PDF, 99 KB
english, 2001