Growth of high quality silicon carbide films on Si by...

Applied Surface Science 2001 Vol. 175-176; Iss. none

Growth of high quality silicon carbide films on Si by triode plasma CVD using monomethylsilane

Kanji Yasui, Kunio Asada, Tomohiro Maeda, Tadashi Akahane
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Volume:
175-176
Year:
2001
Language:
english
Pages:
4
DOI:
10.1016/s0169-4332(01)00109-x
File:
PDF, 111 KB
english, 2001
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