Growth of silicon carbide: process-related defects

Growth of silicon carbide: process-related defects

R. Yakimova, M. Syväjarvi, T. Iakimov, H. Jacobsson, A. Kakanakova-Georgieva, P. Råback, E. Janzén
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Volume:
184
Year:
2001
Language:
english
Pages:
10
DOI:
10.1016/s0169-4332(01)00472-x
File:
PDF, 611 KB
english, 2001
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