Diagnostics of Si multi-δ-doped GaAs layers by Raman...

Applied Surface Science 2001 Vol. 183; Iss. 1-2

Diagnostics of Si multi-δ-doped GaAs layers by Raman spectroscopy on bevelled structures

R Srnanek, P Gurnik, L Harmatha, I Gregora
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Volume:
183
Year:
2001
Language:
english
Pages:
7
DOI:
10.1016/s0169-4332(01)00575-x
File:
PDF, 173 KB
english, 2001
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