Fluorine surface concentration change during the argon–oxygen ion treatment of porous silicon
B.M. Kostishko, S.V. Appolonov, A.E. KostishkoVolume:
189
Year:
2002
Language:
english
Pages:
6
DOI:
10.1016/s0169-4332(02)00010-7
File:
PDF, 107 KB
english, 2002