SIMS depth profiling of N and In in a ZnO single crystal

SIMS depth profiling of N and In in a ZnO single crystal

Dae-Chul Park, Isao Sakaguchi, Naoki Ohashi, Shunichi Hishita, Hajime Haneda
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Volume:
203-204
Year:
2003
Language:
english
Pages:
4
DOI:
10.1016/s0169-4332(02)00676-1
File:
PDF, 141 KB
english, 2003
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