Long-pulse duration excimer laser annealing of Al+ ion implanted 4H-SiC for pn junction formation
C. Dutto, E. Fogarassy, D. Mathiot, D. Muller, P. Kern, D. BallutaudVolume:
208-209
Year:
2003
Language:
english
Pages:
6
DOI:
10.1016/s0169-4332(02)01357-0
File:
PDF, 193 KB
english, 2003