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X-ray topography of lattice relaxation in strained layer semiconductors: post-growth studies and a new facility for in situ topography during MBE growth
S. J. Barnett, C. R. Whitehouse, A. M. Keir, G. F. Clark, B. Usher, B. K. Tanner, M. T. Emeny, A. D. JohnsonYear:
1993
Language:
english
DOI:
10.1088/0022-3727/26/4A/010
File:
PDF, 590 KB
english, 1993