Si atomic layer-by-layer epitaxial growth process using...

Applied Surface Science 2003 Vol. 212-213; Iss. none

Si atomic layer-by-layer epitaxial growth process using alternate exposure of Si(1 0 0) to SiH4 and to Ar plasma

Masao Sakuraba, Daisuke Muto, Takuya Seino, Junichi Murota
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Volume:
212-213
Year:
2003
Language:
english
Pages:
4
DOI:
10.1016/s0169-4332(03)00072-2
File:
PDF, 127 KB
english, 2003
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