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Characteristics of in situ Mg-doped GaN epilayers subjected to ultra-high-temperature microwave annealing using protective caps
S. G. Sundaresan, M. Murthy, M. V. Rao, J. A. Schreifels, M. A. Mastro, C. R. Eddy, R. T. Holm, R. L. Henry, J. A. Freitas, E. Gomar-nadal, R. D. Vispute, Y. TianYear:
2007
Language:
english
DOI:
10.1088/0268-1242/22/10/012
File:
PDF, 406 KB
english, 2007