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Degradation and lifetime estimation of n-MOS SLS ELA polycrystalline TFTs during hot carrier stressing: effect of channel width in the regionVth⩽VGS,stress⩽VDS,stress/2
G. P. Kontogiannopoulos, F. V. Farmakis, D. N. Kouvatsos, G. J. Papaioannou, A. T. VoutsasYear:
2009
Language:
english
DOI:
10.1088/0268-1242/24/7/075027
File:
PDF, 268 KB
english, 2009