Fabrication and characterization of GaInP/GaAs triple barrier resonant tunneling diodes grown by MOCVD
Naoya Asaoka, Hiroki Funato, Michihiko Suhara, Tsugunori OkumuraVolume:
216
Year:
2003
Language:
english
Pages:
6
DOI:
10.1016/s0169-4332(03)00384-2
File:
PDF, 226 KB
english, 2003