Initial stage of 3C–SiC growth on Si(0 0 1)–2 × 1 surface...

Applied Surface Science 2003 Vol. 216; Iss. 1-4

Initial stage of 3C–SiC growth on Si(0 0 1)–2 × 1 surface using monomethylsilane

Yuzuru Narita, Toshikazu Inubushi, Masayuki Harashima, Kanji Yasui, Tadashi Akahane
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Volume:
216
Year:
2003
Language:
english
Pages:
5
DOI:
10.1016/s0169-4332(03)00441-0
File:
PDF, 200 KB
english, 2003
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