ZnSe epitaxial growth on Si(100) and Ge(100) by H-radical...

Applied Surface Science 1997 Vol. 113-114; Iss. none

ZnSe epitaxial growth on Si(100) and Ge(100) by H-radical assisted MOCVD

Toru Aoki, Motohiko Morita, Daiji Noda, Yoichiro Nakanishi, Yoshinori Hatanaka, Naoto Azuma
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Volume:
113-114
Year:
1997
Language:
english
Pages:
5
DOI:
10.1016/s0169-4332(96)00813-6
File:
PDF, 411 KB
english, 1997
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