Sub-30 nm Strained p-Channel Fin-Type Field-Effect Transistors with Condensed SiGe Source/Drain Stressors
K. Tan, T. Liow, R. T. P. Lee, K. Chui, C. Tung, N. Balasubramanian, G. S. Samudra, W. Yoo, Y. YeoYear:
2007
Language:
english
DOI:
10.1143/JJAP.46.2058
File:
PDF, 229 KB
english, 2007