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Electrical Properties of Ag-Doped Ge2Sb2Te5 Films Used for Phase Change Random Access Memory
X. Ji-lin, L. Bo, S. Zhi-tang, F. Song-lin, C. BomyYear:
2005
Language:
english
DOI:
10.1088/0256-307X/22/4/043
File:
PDF, 227 KB
english, 2005