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Analysis and improvement of the position nonlinearity caused by a residual stress in MOS-type position-sensitive detectors with indium tin oxide gate contact
H. A. Andersson, N. Bylund, G. Thungström, H. NilssonYear:
2008
Language:
english
DOI:
10.1088/0268-1242/23/7/075012
File:
PDF, 1.48 MB
english, 2008