Analysis and improvement of the position nonlinearity...

  • Main
  • Analysis and improvement of the...

Analysis and improvement of the position nonlinearity caused by a residual stress in MOS-type position-sensitive detectors with indium tin oxide gate contact

H. A. Andersson, N. Bylund, G. Thungström, H. Nilsson
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Year:
2008
Language:
english
DOI:
10.1088/0268-1242/23/7/075012
File:
PDF, 1.48 MB
english, 2008
Conversion to is in progress
Conversion to is failed